A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 100 V
C
J
V
R
= 6.0 V f = 1.0 MHz 0.05 pF
R
S
I
F
= 20 mA f = 1.0 GHz
I
F
= 100 mA
2.6
2.0
Ohms
T
L
I
F
= 10 mA I
R
= 6.0 mA 100 nS
T
S
10%-90% / 90%-10% 10 nS
C
P
f = 1.0 MHz 0.15 pF
L
S
2.5 nH
SILICON PIN DIODE
AP1000A
DESCRIPTION:
The AP1000A is a Diffused Epitaxial
Silicon PIN Diode.
MAXIMUM RATINGS
I
C
100mA
V
CE
100 V
P
DISS
500 mW @ T
C
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +175
O
C
θ
JC
50
O
C/W
T
SOLD
5.0 Sec./200
O
C
PACKAGE STYLE 15