Agilent ATF-53189 Enhancement
Mode
[1]
Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Features
• Single voltage operation
• High Linearity and Gain
• Low Noise Figure
• Excellent uniformity in product
specifications
• SOT 89 standard package
• Point MTTF > 300 years
[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option
available
Specifications
2 GHz, 4.0V, 135 mA (Typ.)
• 40.0 dBm Output IP3
• 23.0 dBm Output Power at 1dB gain
compression
• 0.85 dB Noise Figure
• 15.5 dB Gain
• 46% PAE at P1dB
• LFOM
[3]
12.7 dB
Applications
• Front-end LNA Q1 and Q2, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Notes:
Package marking provides orientation and
identification:
“3G” = Device Code
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
Notes:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3
divided by DC bias power.
Description
Agilent Technologies’s
ATF-53189 is a single-voltage
high linearity, low noise
E-pHEMT FET packaged in a
low cost surface mount SOT89
package. The device is ideal as a
high-linearity, low noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
ATF-53189 is ideally suited for
Cellular/PCS and WCDMA
wireless infrastructure, WLAN,
WLL and MMDS application, and
general purpose discrete
E-pHEMT amplifiers which
require medium power and high
linearity. All devices are 100% RF
and DC tested.
3GX
Bottom View
DS
S
G
Top View
GS
S
D