1.9
0.95
0.95
2.9
0.4
1.3
2.4
1.0


SOT-23 Plastic-Encapsulate Transistors


9012LT1 TRANSISTOR（ PNP ）

FEATURES

Power dissipation
PCM : 0.3 W（ Tamb=25℃）
Collector current
ICM : -0.5 A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless
otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100μ A， IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA， IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μ A， IC=0 -5 V
Collector cut-off current ICBO VCB=-40 V , IE=0 -0.1 μ A
Collector cut-off current ICEO VCE=-20V , IB=0 -0.1 μ A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μ A
hFE(1) VCE=-1V, IC= -50mA 120 350
DC current gain
hFE(2) VCE=-1V, IC=-500mA 40
Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V
Transition frequency fT VCE=-6V, IC= -20mA f=
30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120 - 200 200 - 350

DEVICE MARKING: 9012LT1=2T1


























Unit : mm
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR
SHENZHEN ICHN ELECTRONICS TECH. CO., LTD
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