NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage V
CBO
60 V
Collector -Emitter Voltage V
CEO
45 V
Emitter Base Voltage V
EBO
5V
Collector Current Continuous I
C
1.5 A
Total Power Dissipation P
D
850 mW
Operating and Storage Junction T
j
, T
stg
-55 to +150 ºC
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector Emitter Voltage V
CEO
I
C
=10mA, I
B
=0 45 V
Collector -Base Voltage V
CBO
I
C
=100µA, I
E
=0 60 V
Emitter-Base Voltage V
EBO
I
E
=10µA, I
C
=0 5 V
Collector Cut off Current I
CBO
V
CB
=60V, I
E
=0 0.1 µA
Emitter Cut off Current I
EBO
V
EB
=4V, I
C
=0 0.1 µA
DC Current Gain h
FE
I
C
=50mA,V
CE
=2V 40
I
C
=250mA,V
CE
=2V 40 250
I
C
=500mA,V
CE
=2V 25
Collector Emitter Saturation Voltage V
CE(sat)
I
C
=500mA,I
B
=50mA 0.5 V
I
C
=1A,I
B
=100mA 1V
Transition Frequency f
T
V
CE
=10V, I
C
=200mA, 50 400 MHz
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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