2SK3821
器件描述：General-Purpose Switching Device Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：52.59KB，共4页
Sponsor by e络盟器件资料摘要：
2SK3821
No.8058-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8058
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2404QA TS IM TB-00000615
2SK3821
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
•
4V drive.
•
Ultrahigh-speed switching.
•
Motor drive, DC / DC converter.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
100 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
40 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 160 A
Allowable Power Dissipation P
D
1.65 W
Tc=25°C65
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Enargy (Single Pulse) *1 E
AS
200 mJ
Avalanche Current *2 I
AV
40 A
Note : *1 V
DD
=20V, L=200µH, I
AV
=40A
*2 L≤200µH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 100 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=100V, V
GS
=0 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
= ±16V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.2 2.6 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=20A 18.5 31 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=20A, V
GS
=10V 25 33 mΩ
R
DS
(on)2 I
D
=20A, V
GS
=4V 30 42 mΩ
Marking : K3821 Continued on next page.
No.8058-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8058
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2404QA TS IM TB-00000615
2SK3821
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
•
4V drive.
•
Ultrahigh-speed switching.
•
Motor drive, DC / DC converter.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
100 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
40 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 160 A
Allowable Power Dissipation P
D
1.65 W
Tc=25°C65
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Enargy (Single Pulse) *1 E
AS
200 mJ
Avalanche Current *2 I
AV
40 A
Note : *1 V
DD
=20V, L=200µH, I
AV
=40A
*2 L≤200µH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 100 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=100V, V
GS
=0 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
= ±16V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.2 2.6 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=20A 18.5 31 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=20A, V
GS
=10V 25 33 mΩ
R
DS
(on)2 I
D
=20A, V
GS
=4V 30 42 mΩ
Marking : K3821 Continued on next page.