2N6071A
器件描述：SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS
器件厂商：CENTRAL [Central Semiconductor Corp]
文件大小：81.16KB，共2页
Sponsor by e络盟器件资料摘要：
2N6071, A, B
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
TO-126 CASE
Central
Semiconductor Corp.
TM
R0 (27-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (T
J
=25°C unless otherwise noted)
2N6071 2N6073 2N6075
2N6071A 2N6073A 2N6075A
SYMBOL 2N6071B 2N6073B 2N6075B UNITS
Peak Repetitive Off-State Voltage V
DRM,
V
RRM
200 400 600 V
RMS On-State Current (T
C
=85°C) I
T(RMS)
4.0 A
Peak One Cycle Surge (60Hz, T
J
=110°C) I
TSM
30 A
I
2
t Value for Fusing (t=8.3ms) I
2
t 3.7 A
2
s
Peak Gate Power (T
C
=85°C) P
GM
10 W
Average Gate Power (t=8.3ms, T
C
=85°C) P
G(AV)
0.5 W
Peak Gate Voltage (T
C
=85°C) V
GM
5.0 V
Storage Temperature T
stg
-40 to +150 °C
Junction Temperature T
J
-40 to +110 °C
Thermal Resistance Θ
JC
3.5 °C/W
Thermal Resistance Θ
JA
75 °C/W
Maximum Lead Temperature T
L 260
°C
ELECTRICAL CHARACTERISTICS: (T
C
=25°C unless otherwise noted)
A Series B Series
SYMBOL TEST CONDITIONS TYP MAX TYP MAX TYP MAX UNITS
I
DRM,
I
RRM
V
D
=Rated V
DRM,
V
RRM,
T
J
=25°C 10 10 10 µA
I
DRM,
I
RRM
V
D
=Rated V
DRM,
V
RRM,
T
J
=110°C 2.0 2.0 2.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD I, T
J
=25°C 30 5.0 3.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD II, T
J
=25°C - 5.0 3.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD III, T
J
=25°C 30 5.0 3.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD IV, T
J
=25°C - 10 5.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD I, T
J
= -40°C 60 20 15 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD II, T
J
= -40°C - 20 15 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD III, T
J
= -40°C 60 20 15 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD IV, T
J
= -40°C - 30 20 mA
I
H
V
D
=12V, I
T
=1.0A, T
J
=25°C 30 15 15 mA
I
H
V
D
=12V, I
T
=1.0A, T
J
= -40°C 70 30 30 mA
V
GT
V
D
=12V, R
L
=100Ω, T
J
=25°C, QUAD I, II, III, IV 2.0 2.0 2.0 V
V
GT
V
D
=12V, R
L
=100Ω, T
J
= -40°C, QUAD I, II, III, IV 2.5 2.5 2.5 V
V
TM
I
TM
=6.0A 2.0 2.0 2.0 V
t
on
I
TM
=14A, I
GT
=100mA 1.5 1.5 1.5 µs
dv/dt V
D
= Rated V
DRM
, I
TM
=5.7A, T
J
=85°C 5.0 5.0 5.0 V/µs
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
TO-126 CASE
Central
Semiconductor Corp.
TM
R0 (27-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (T
J
=25°C unless otherwise noted)
2N6071 2N6073 2N6075
2N6071A 2N6073A 2N6075A
SYMBOL 2N6071B 2N6073B 2N6075B UNITS
Peak Repetitive Off-State Voltage V
DRM,
V
RRM
200 400 600 V
RMS On-State Current (T
C
=85°C) I
T(RMS)
4.0 A
Peak One Cycle Surge (60Hz, T
J
=110°C) I
TSM
30 A
I
2
t Value for Fusing (t=8.3ms) I
2
t 3.7 A
2
s
Peak Gate Power (T
C
=85°C) P
GM
10 W
Average Gate Power (t=8.3ms, T
C
=85°C) P
G(AV)
0.5 W
Peak Gate Voltage (T
C
=85°C) V
GM
5.0 V
Storage Temperature T
stg
-40 to +150 °C
Junction Temperature T
J
-40 to +110 °C
Thermal Resistance Θ
JC
3.5 °C/W
Thermal Resistance Θ
JA
75 °C/W
Maximum Lead Temperature T
L 260
°C
ELECTRICAL CHARACTERISTICS: (T
C
=25°C unless otherwise noted)
A Series B Series
SYMBOL TEST CONDITIONS TYP MAX TYP MAX TYP MAX UNITS
I
DRM,
I
RRM
V
D
=Rated V
DRM,
V
RRM,
T
J
=25°C 10 10 10 µA
I
DRM,
I
RRM
V
D
=Rated V
DRM,
V
RRM,
T
J
=110°C 2.0 2.0 2.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD I, T
J
=25°C 30 5.0 3.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD II, T
J
=25°C - 5.0 3.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD III, T
J
=25°C 30 5.0 3.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD IV, T
J
=25°C - 10 5.0 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD I, T
J
= -40°C 60 20 15 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD II, T
J
= -40°C - 20 15 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD III, T
J
= -40°C 60 20 15 mA
I
GT
V
D
=12V, R
L
=100Ω, QUAD IV, T
J
= -40°C - 30 20 mA
I
H
V
D
=12V, I
T
=1.0A, T
J
=25°C 30 15 15 mA
I
H
V
D
=12V, I
T
=1.0A, T
J
= -40°C 70 30 30 mA
V
GT
V
D
=12V, R
L
=100Ω, T
J
=25°C, QUAD I, II, III, IV 2.0 2.0 2.0 V
V
GT
V
D
=12V, R
L
=100Ω, T
J
= -40°C, QUAD I, II, III, IV 2.5 2.5 2.5 V
V
TM
I
TM
=6.0A 2.0 2.0 2.0 V
t
on
I
TM
=14A, I
GT
=100mA 1.5 1.5 1.5 µs
dv/dt V
D
= Rated V
DRM
, I
TM
=5.7A, T
J
=85°C 5.0 5.0 5.0 V/µs