A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 200 mA 35 V
BV
CES
I
C
= 200 mA 70 V
I
CES
V
CE
= 60 V T
C
= 55
O
C30mA
BV
EBO
I
E
= 20 mA 3.5 V
h
FE
V
CE
= 6.0 V I
C
= 5.0 A 20 ---
V
F
I
F
= 10 mA 0.8 V
h
fe
V
CE
= 28 V I
C
= 1.0 A f = 50 MHz 2.0 ---
C
OB
V
CB
= 30 V f = 1.0 MHz 250 pF
P
IE
V
CC
= 28 V I
C
= 20 mA P
OE
= 37.5 W
f = 30 MHz P
OE
= 75.0 W
1.88
3.75
W
G
PE
η
C
IMD
V
CC
= 28 V I
C
= 20 mA P
OE
= 75.0 W
f = 30 MHz
13
40
-30
dB
%
dB
NPN SILICON RF POWER TRANSISTOR
2N6093
DESCRIPTION:
The 2N6093 is a High Gain Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temperature Sensing Diode.
MAXIMUM RATINGS
I
C
10 A
V
CE
35 V
P
DISS
83.3 W @ T
C
= 75
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
1.50
O
C/W
PACKAGE STYLE TO-217
¼-28 UNF Thread
1 = Emitter & Diode Cathode
2 = Collector
3 = Base
4 = Diode Anode