Avalanche Photodiode NIR

Special characteristics:

quantum efficiency > 80 % at λ 760 - 910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve











































AD500-9 TO52S1
Parameters:

AD500-9 TO52S1
Active Area 0.196 mm
2
Ø 500 µm
Dark Current
1)

(M = 100)
max. 5 nA
typ. 0.5 - 1 nA
Total Capacitance
1)

(M = 100)

typ. 1.2 pF
Breakdown Voltage U
BR
(at I
D
= 2 µA)

120 … 300 V
typ. > 200 V
Temperature Coefficient of U
BR
typ. 1.55 V/K
Spectral Responsivity
1)

(at 905 nm, M = 100)
min. 55 A/W
typ. 60 A/W
Cut-off Frequency
(-3dB)

typ. 0.5 GHz
Rise Time typ. 550 ps
Optimum Gain 50 - 60
Max. Gain > 200
“Excess Noise” factor
(M = 100)

typ. 2.5
“Excess Noise” index
(M = 100)

typ. 0.2
Noise Current
(M = 100)

typ. 1 pA/Hz
1/2

N.E.P.
(M = 100, 905 nm)

typ. 2* 10
-14
W/Hz
1/2
Operating Temperature
Storage Temperature
-20 ... +70 °C
-60 ... +100 °C



1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(880 nm, 80 nm bandwith).

Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.


Package (TO52S1):
www.silicon-sensor.com
www.pacific-sensor.com
Version: 05-04-29
Specification before: SSO-AD-500-9-TO52-S1

∅ 5.4 ± 0.2
∅ 2.54
1 3
4

45°
CATHODE
ANODE
CASE
Chip: AD500-9
diam. active area: 100 µm
1
3
4
view without
window cap
∅ 2.0 min.
∅ 4.7 ± 0.1
∅ 3.0 ± 0.1
0.35 ± 0.2


13 ± 1.0

∅ 0.45
0.5 max.

0.4 max.

2.7 ± 0.2

0.9 ± 0.3

3.6 ± 0.2

sensi
ti
v
e
surface