32-megabit
DataFlash
®
+ 4-megabit
SRAM
Stack Memory
AT45BR3214B
Rev. 3356B–DFLASH–10/04
Features
• 32-Mbit DataFlash and 4-Mbit SRAM
Single 62-ball (8 mm x 12 mm x 1.2 mm) CBGA Package
2.7V to 3.3V Operating Voltage
DataFlash
Single 2.7V to 3.3V Supply
Serial Peripheral Interface (SPI) Compatible
20 MHz Max Clock Frequency
Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 8192 Pages (528 Bytes/Page) Main Memory
Supports Page and Block Erase Operations
Two 528-byte SRAM Data Buffers – Allows Receiving of Data
while Reprogramming of Nonvolatile Memory
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low Power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
Hardware Data Protection Feature
Industrial Temperature Range
SRAM
4-megabit (256K x 16)
2.7V to 3.3V V
CC
70 ns Access Time
Fully Static Operation and Tri-state Output
1.2V (Min) Data Retention
Industrial Temperature Range
1