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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

71V433S11PF

器件描述:32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
器件厂商:IDT [Integrated Device Technology]
厂商主页:http://www.idt.com/
文件大小:261.77KB,共19页
Sponsor by e络盟
器件资料摘要:
1
©2000 Integrated Device Technology, Inc.
AUGUST 2001
DSC-3729/04
Pin Description
Features
a78
32K x 32 memory configuration
a78
Supports high performance system speed:
Commercial and Industrial:
— 11 11ns Clock-to-Data Access (50MHz)
— 12 12ns Clock-to-Data Access (50MHz)
a78
LBO input selects interleaved or linear burst mode
a78
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
a78
Power down controlled by ZZ input
a78
Single 3.3V power supply (+10/-5%)
a78
Packaged in a JEDEC Standard 100-pin rectangular plastic
thin quad flatpack (TQFP).
Description
The IDT71V433 is a 3.3V high-speed 1,048,576-bit SRAM orga-
nized as 32K x 32 with full support of various processor interfaces
including the Pentium™ and PowerPC™. The flow-through burst archi-
tecture provides cost-effective 2-1-1-1 performance for processors up to
50 MHz.
32K x 32
3.3V Synchronous SRAM
Flow-Through Outputs
IDT71V433
A0–A14 Address Inputs Input Synchronous
CE Chip Enable Input Synchronous
CS0, CS1 Chips Selects Input Synchronous
OE Output Enable Input Asynchronous
GW Global Write Enable Input Synchronous
BWE Byte Write Enable Input Synchronous
BW1–BW4 Individual Byte Write Selects Input Synchronous
CLK Clock Input Input N/A
ADV Burst Address Advance Input Synchronous
ADSC Address Status (Cache Controller) Input Synchronous
ADSP Address Status (Processor) Input Synchronous
LBO Linear / Interleaved Burst Order Input DC
ZZ Sleep Mode Input Asynchronous
I/O0–I/O31 Data Input/Output I/O Synchronous
VDD, VDDQ Core and I/O Power Supply (3.3V) Power N/A
VSS, VSSQ Array Ground, I/O Ground Power N/A
3729 tbl 01
Pentium is a trademark of Intel Corp.
PowerPC is a trademark of International Business Machines, Inc.
The IDT71V433 SRAM contains write, data-input, address and
control registers. There are no registers in the data output path (flow-
through architecture). Internal logic allows the SRAM to generate a
self-timed write based upon a decision which can be left until the
extreme end of the write cycle.
The burst mode feature offers the highest level of performance to
the system designer, as the IDT71V433 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from
the array after a clock-to-data access time delay from the rising clock
edge of the same cycle. If burst mode operation is selected (ADV=LOW),
the subsequent three cycles of output data will be available to the
user on the next three rising clock edges. The order of these three
addresses will be defined by the internal burst counter and the LBO
input pin.
The IDT71V433 SRAM utilizes IDT's high-performance 3.3V
CMOS process, and is packaged in a JEDEC Standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP).