Power Transistors
1
Publication date: November 2004 SJD00326AED
2SC5926
Silicon NPN triple diffusion planar type
For power amplification
■ Features
• High forward current transfer ratio h
FE
which has satisfactory linearity.
• Low collector-emitter saturation voltage V
CE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 0 60 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 80 V, I
E
= 0 100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 40 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 0 100 µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= 4 V, I
C
= 0.5 A 500 2 300 
h
FE2
V
CE
= 4 V, I
C
= 3 A 100
Collector-emitter saturation voltage V
CE(sat)
I
C
= 1 A, I
B
= 20 mA 0.7 V
Turn-on time t
on
I
C
= 1 A, Resistance loaded 0.2 µs
Storage time t
stg
I
B1
= 0.1 A, I
B2
= − 0.1 A 1.5 µs
Fall time t
f
V
CC
= 50 V 0.1 µs
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
6V
Collector current I
C
3A
Peak collector current I
CP
6A
Collector power dissipation P
C
15 W
T
a
= 25°C
2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q P
h
FE1
500 to 1 500 1 300 to 2 300
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder Dip
5.0±0.1
2.5
±
0.1
90˚
1.0±0.2
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Note)
*
: Non-repetitive peak collector current
Internal Connection
B
C
E