SOT8
9 NPN S
ILICON P
L
A
N
A
R

M
E
D
IUM
P
OWER
TR
ANSIS
TOR
S
ISS
UE 3

–
F
E
B
R
U
ARY

1996
a37
P
ARTM
A
R
KI
NG
DET
AILS:
-
B
CX54 –
BA


B
CX54-
1
0
–
B
C


B
CX54-
1
6
–
BD
B
CX55 –
B
E


B
CX55-
1
0
–
BG


B
CX55-
1
6
–
BM
B
CX56 –
BH


B
CX56-
1
0
–
B
K


B
CX56-
1
6
–
B
L
C
O
M
PLEM
EN
TAR
Y T
YPES
:
-
B
CX54 –
BCX
5
1


B
CX55 – B
C
X
5
2

B
CX56 – B
CX53
ABS
OL
U
T
E
M
AXIM
UM
RATIN
GS.
PA
RAMETER
SYMBOL
BCX
5
4
BCX
5
5
BCX5
6
UNIT
C
o
lle
ctor
-Ba
se Volta
ge
V
CB
O
45
60
10
0
V
C
o
lle
ctor
-Emitt
e
r
Vo
lt
age
V
CE
O
45
60
80
V
Emit
t
e
r
-
B
a
s
e
Vo
lt
a
g
e
V
EB
O
5V
Pe
ak Pulse
Curr
ent
I
CM
2A
C
o
ntinuous Collect
o
r
Curr
e
n
t
I
C
1A
Powe
r Dis
sipation a
t
T
am
b
=
2
5°C
P
to
t
1W
Oper
a
ting
a
n
d
S
tora
g
e
Tempe
r
a
ture
Range
T
j
:T
st
g
-
6
5
to
+15
0
°
C
E
L
ECTR
IC
AL CH
ARA
CTER
ISTIC
S

(
a
t T
am
b
=
25
°
C
unle
s
s

ot
h
e
rwi
s
e
sta
t
e
d
)
.
PA
RAMETER
SYMBOL
MIN.
TYP.
MAX.
U
N
I
T
CO
ND
I
T
IONS.
C
o
lle
ctor
-Ba
se Br
e
a
kdown
V
o
l
t
age
BC
X
5
4
BC
X5
5
BC
X5
6
V
(BR
)CBO
45 60 10
0
V
I
C
=1
00
µ
A
C
o
lle
ctor
-Emitt
e
r
B
r
e
akdown Voltage
BC
X5
4
BC
X5
5
BC
X5
6
V
(BR
)CE
O
45 60 80
VI
C
=1
0m
A
*
Emi
tte
r-
Ba
se B
r
e
a
k
d
own Volt
age
V
(BR
)EB
O
5V
I
E
=10
µ
A
C
o
lle
ctor
Cut-Off C
u
r
r
ent
I
CB
O
0.1 20
µ
A
µ
A
V
CB
=
30V
V
CB

=
30V
,
T
amb
=
1
50
°C
Emit
t
e
r
Cut-
O
f
f Curr
ent
I
EB
O
2
0
nA
V
EB
=4V
C
o
lle
ctor
-Emitt
e
r
Satur
a
t
i
o
n Volta
ge
V
C
E(sat)
0.5
V
I
C
=
5
0
0mA, I
B
=
5
0mA
*
B
a
s
e
-Emitt
e
r
T
u
r
n-On

Volta
ge
V
B
E(o
n)
1.0
V
I
C
=
5
0
0mA, V
CE
=
2V*
S
tat
ic For
war
d Cu
r
r
ent Tr
ansfe
r
R
atio
h
FE
–10 –16
25 40 25 63 10
0
250 160 250
I
C
=
5mA,

V
CE
=
2V*
I
C
=
1
5
0mA, V
CE
=
2V*
I
C
=
5
0
0mA, V
CE
=
2V*
I
C
=
1
5
0mA, V
CE
=
2V*
I
C
=
1
5
0mA, V
CE
=
2V*
Tr
ansit
i
o
n F
r
e
q
u
e
ncy
f
T
15
0
M
Hz
I
C
=
5
0
mA, V
CE
=1
0V,
f=
1
0
0MH
z
Output Ca
p
a
cita
nce
C
obo
1
5
pF
V
CB
=
10V
, f=
1MH
z
*
Mea
sur
ed un
de
r pulse
d
conditions. Pu
ls
e width=
3
0
0
µ
s. D
uty c
ycle

≤
2%
BC
X
5
4
BC
X
5
5
BC
X
5
6
C
C
B
E
3 -
3
5