P-Channel Enhancement Mode
MOSFET General Purpose
Amplifier Switch
3N163 / 3N164
FEATURES
•
Very High Input Impedance
•
High Gate Breakdown
•
Fast Switching
•
Low Capacitance
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
Static Gate-Source Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
3N163-64 Hermetic TO-72 -55
o
C to +150
o
C
X3N163-64 Sorted Chips in Carriers -55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
1503
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL PARAMETER
3N163 3N164
UNITS TEST CONDITIONS
MIN MAX MIN MAX
IGSS Gate-Body Leakage Current
-10 -10
pA
VGS = -40V, VDS = 0 (3N163)
VGS = -30V, VDS = 0 (3N164)
-25 -25 TA = +125
o
C
BVDSS Drain-Source Breakdown Voltage -40 -30
V
ID = -10µA, VGS = 0
BVSDS Source-Drain Breakdown Voltage -40 -30 IS = -10µA, VGD = 0, VBD = 0
VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS = VGS, ID = -10µA
VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10µA
VGS Gate Source Voltage -2.5 -6.5 -2.5 -6.5 VDS = -15V, ID = -0.5mA
IDSS Zero Gate Voltage Drain Current 200 400
pA
VDS = -15V, VGS = 0
ISDS Source Drain Current 400 800 VSD = 15V, VGS = VDB = 0
rDS(on) Drain-Source on Resistance 250 300 ohms VGS = -20V, ID = -100µA
ID(on) On Drain Current -5.0 -30.0 -3.0 -30.0 mA VDS = +15V, VGS = -10V