1150MP
150 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION
The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
250 Watts Peak

Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 6.0 Amps Peak
Maximum Temperatures
Storage Temperature - 65 to +150
o
C
Operating Junction Temperature + 200
o
C

ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
OUT
Power Out F= 1025-1150 MHz 140 150 W
P
IN
Power Input Vcc = 50 Volts

30 W
P
G
Power Gain PW = 10 µsec, DF = 1% 7.0 7.5 dB
ηc Efficiency 35 38 %
VSWR Load Mismatch Tolerance F = 1090 MHz 10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown

Ie = 1 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 10mA 65 V
Hfe DC Current Gain Vce = 5V, Ic = 500 mA 15 120
Cob Output Capacitance Vcb = 50 V, f = 1 MHz 16 pF
θjc
2
Thermal Resistance Tc=25ºC 0.6
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions

Initial Issue June, 1994
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.