TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices Qualified Level
2N3867
2N3867S
2N3868
2N3868S




JAN
JANTX
JANTXV

MAXIMUM RATINGS

Ratings

Symbol
2N3867
2N3867S
2N3868
2N3868S

Unit
Collector - Emitte r Voltage V CEO 40 60 Vdc
Collector - Base Voltage V CBO 40 60 Vdc
Emitter - Base Voltage V EBO 4.0 Vdc
Collector Current -- Continuous I C 3.0 Adc
Total Power Dissipation @ T A = 25 0 C (1)
@ T C = 25 0 C (2) P T
1.0
10
W
W
Operating & Storage Temperature Range T OP, T ST G - 55 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 17.5 0 C/W
1) Derate linearly 5.71 mW/ 0 C for T A > +25 0 C
2) Derate linearly 57.1 mW/ 0 C for T C > +25 0 C

*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Base Breakdown Voltage
I C = 100 µAdc 2N3867, S
2N3868, S
V (BR) C BO

40
60

Vdc
Collector - Emitter Breakdown Voltage
I C = 20 mAdc 2N3867, S
2N3868, S
V (BR) CEO

40
60

Vdc
Emitter - Base Breakdown Voltage
I E = 100 µAdc V (BR) EBO

4.0
Vdc
Collector - Emitter Cutoff Current
V EB = 2.0 Vdc, V CE = 40 Vdc 2N3867, S
V EB = 2.0 Vdc, V CE = 60 Vdc 2N3868, S
I CEX



1.0
1.0
µAdc

Collector - Base Cutoff Current
V CB = 40 Vdc 2N3867, S
V CB = 60 Vdc 2N3868, S
I CBO

10 0 µAdc
Emitter - Base Cutoff Current
V EB = 4 Vdc I EBO
100 µAdc

6 Lake Street, Lawrence, MA 01841
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
120101
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TO - 5*
2N3867, 2N3868

TO - 39*
(TO - 205AD)
2N3867S, 2N3868S