2SK3564
2003-02-14 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564

Switching Regulator Applications


• Low drain-source ON resistance: R
DS (ON)
= 3.7 (typ.)
• High forward transfer admittance: |Y
fs
| = 2.6 S (typ.)
• Low leakage current: I
DSS
= 100 A (V
DS
= 720 V)
• Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
900 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
900 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
3
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
9
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
TBD mJ
Avalanche current I
AR
3 A
Repetitive avalanche energy (Note 3) E
AR
4.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
3.125 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C, L = TBD mH, I
AR
= 3.0 A, R
G
= 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

JEDEC
JEITA
TOSHIBA
•
•
•
2.7±0.2
1 2 3
2.54±0.25 2.54±0.25
10±0.3
φ3.2±0.2
3.0
3.9
15.0
±
0.3
12.5 M
i
n.
2.8M
ax

0.69±0.15
1.1
1.1
4.5
±
0.2
2.6
0.64
±
0.15
1. Gate
2. Drain
3. Source

1
3
2
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