Switching Diode
BAS16
Silicon epitaxial planar type
Features
Low power loss, high efficiency
High reliability
High speed ( trr < 4 ns )
Mechanical data
Case : Glass, SOT-23
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Non-Repetitive peak reverse voltage VRM 100 V
Reverse voltage VR 75 V
Peak forward surge current tp= 1 us IFSM 2.0 A
Repetitive peak forward voltage IFRM 500 mA
Forward current IF 300 mA
Average forward current VR = 0 IFAV 200 mA
Power dissipation PV 350 mW
Junction temperature Tj 125 oC
Storage temperature TSTG -55 +125 oC
Formosa MS
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
IF = 5mA VF 0.62 0.72 V
IF = 10mA VF 0.86 1.00 V
Reverse current VR = 75V IR 5.0 uA
Breakdown current IR = 100uA , TP/T = 0.01 TP = 0.3ms V(BR) 100 V
Diode capacitance VR = 0 , f = 1MHz , VHF = 50mV CD 2.0 pF
Rectification efficiency VHF = 2V , f = 100MHz nR 45 %
Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR, RL=100OHM trr 6 ns
Forward voltage
SOT-23
Dimensions in inches and (millimeters)
0.033 (0.85)
0.045 (1.15)
R 0.05
(0.002)
0.055 (1.40)
0.047 (1.20)
0.102 (2.60)
0.094 (2.40)
0.028 (0.70)
0.020 (0.50)
(A)
(B) (C)
0.
11
8 (
3.
00
)
0.
11
0 (
2.
80
)
.0
79
(2
.0
0)
.0
71
(1
.8
0)
0.
04
0 (
1.
02
)
0.
03
5 (
0.
88
)
0.
01
7 (
0.
42
)
0.
01
5 (
0.
38
)