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BAL99W

器件描述:Dual Series Switching Diode - Silicon epitaxial planar type
器件厂商:FORMOSA [Formosa MS]
文件大小:100.59KB,共2页
Sponsor by e络盟
器件资料摘要:
Dual Series Switching Diode
BAL99W
BAW56W
BAV70W
BAV99W
Silicon epitaxial planar type
Features
Small surface mounting type
High reliability
High speed ( trr < 1.5 ns )
Mechanical data
Case : SOT-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Mounting Position : Any
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Repetitive peak reverse voltage VRRM 70 V
Reverse voltage VR 70 V
Peak forward surge current tp= 1 us IFSM 2.0 A
Repetitive peak forward current IFRM 450 mA
Forward current IF 215 mA
Average forward current VR = 0 IFAV 715 mA
Power dissipation PD 225 mW
Junction temperature Tj 175 oC
Storage temperature TSTG -55 +150 oC
Formosa MS
SOT-323
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
IF = 10mA VF 0.855 V
IF = 150mA VF 1.250 V
VR = 70V IR 2.5 uA
VR = 20V , Tj = 150 oC IR 30 uA
VR = 70V , Tj = 150 oC IR 50 uA
Breakdown current IR = 100uA , TP/T = 0.01 TP = 0.3ms V(BR) 70 V
Diode capacitance VR = 0 , f = 1MHz , VHF = 50mV CD 1.5 pF
Reverse recovery time IF =10mA, VR = 10mA, IRR = 0.1 X IR, RL=100OHM trr 6 ns
Forward voltage
Reverse current
0.031 (0.80)
0.043 (1.10)
R 0.05
(0.002)
0.055 (1.40)
0.047 (1.20)
0.089 (2.30)
0.079 (2.00)
0.017 (0.43)
MIN
(A)
(B) (C)
0.
08
7 (
2.
20
)
0.
07
1 (
1.
80
)
.0
51
(1
.3
0)
MI
N
0.
02
6 (
0.
70
)
MI
N.
0.
01
6 (
0.
40
)
0.
01
2 (
0.
30
)
SINGLE(Alt) COMMON ANODE COMMON CATHODE
BAL99W BAW56W BAV70W
SERIES
BAV99W
0.0010 (0.25)
0.0004 (0.10)