Advanced Switching Diode
ASD355-N
Silicon epitaxial planar type
Features
Small surface mounting type
High reliability
High speed ( trr < 4 ns )
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Repetitive peak reverse voltage VRRM 100 V
Peak forward surge current tp < 1s IFSM 500.0 mA
Average forward current VR = 0 IFAV 100 mA
Power dissipation PV 350 mW
Junction temperature Tj 175 oC
Storage temperature TSTG -55 +175 oC
Formosa MS
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Forward voltage IF = 10mA VF 1.2 V
VR = 25V IR 100 nA
VR = 25V , Tj = 150 oC IR 50 uA
VR = 80V IR 30 uA
Breakdown current IR = 100uA , TP/T = 0.01 TP = 0.3ms V(BR) 100 V
Diode capacitance VR = 0 , f = 1MHz , VHF = 50mV CD 4.0 pF
Thermal resistance Junction to ambient RthJA K/mW
Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR, RL=100OHM trr 4 ns
Reverse current
SOD-323
0.106 (2.7)
0.090 (2.3) 0.012(0.3) Typ.
0.053 (1.35)
0.045 (1.15)
0.035 (0.9)
0.028 (0.7)
R0.5 (0.02) Typ.