BUL1101E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
a73 LARGE RBSOA
APPLICATIONS
a73 ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
April 2003
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) V(BR)EBO V
IC Collector Current 3 A
ICM Collector Peak Current (tp <5 ms) 6 A
I
B
Base Current 1.5 A
I
BM
Base Peak Current (t
p
<5 ms) 3 A
P
tot
Total Dissipation at Tc = 25
o
C70W
Tstg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C

TO-220
®
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