TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices Qualified Level
2N5671 2N5672




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N5671 2N5672 Unit
Collector - Emitter Voltage V CEO 90 120 Vdc
Collector - Base Voltage V CBO 120 150 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 10 Adc
Collector Current I C 30 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
6.0
140
W
W
Operating & Storage Temperature Range T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.25 0 C/W
1) Derate linearly 34.2 mW/ 0 C for T A > +25 0 C
2) Derate linearly 800 mW/ 0 C for T C > +25 0 C






TO - 3*
( TO - 204AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N5671
2N5672
V (BR) CEO

90
120

Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N5671
2N5672
V (BR) CER

110
140

Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N5671
2N5672
V (BR) CEX

120
150

Vdc
Collector - Emitter Cutoff Current
V CE = 80 Vdc I CEO
10 m Adc
Collector - Emitter Cutoff Current
V CE = 110 Vdc, V BE = 1.5 Vdc 2N5671
V CE = 135 Vdc, V BE = 1.5 Vdc 2N5672
I CEX

12
10
mAdc

6 Lake Street, Lawrence, MA 01841
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120101
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