Continental Device India Limited Data Sheet Page 1 of 6
2N4400, 2N4401
2N4402, 2N4403
ABSOLUTE MAXIMM RATINGS
Rating Symbol 2N4400/01 2N4402/03 Units
Collector-Emitter Voltage V
CEO
40 40 V
Collector-Base Voltage V
CBO
60 40 V
Emitter-Base Voltage V
EBO
65
Collector Current Continuous I
C
- 600 - mA
Power Dissipation At Ta=25 ºC P
D
- 625 - mW
Derate Above 25 ºC - 5.0 - mW/ºC
Power Dissipation At Tc=25 ºC P
D
- 1.5 - W
Derate Above 25 ºC - 12 - mW/ºC
Operating & Storage T
j
,T
stg
-55 to +150 ºC
Junction Temperature Range
THERMAL RESISTANCE
Junction to Case R
th (j-c)
- 83.3 - ºC/W
Junction to Ambient R
th (j-a)
- 200 - ºC/W
ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
1 = EMITTER
2 = BASE
3 = COLLECTOR
DIM MIN MAX
A 4,32 5,33
B 4,45 5,20
C 3,18 4,19
D 0,41 0,55
E 0,35 0,50
F 5 DEG
G 1,14 1,40
H 1,14 1,53
K 12,70 –
L 1.982 2.082
ALL DIMENSIONS IN M.M.
E
B
C
1 2 3
TO-92 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company