BUL742
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
a73 LARGE RBSOA
APPLICATIONS
a73 ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
a73 SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
®
INTERNAL SCHEMATIC DIAGRAM
June 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 900 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= 0.75 A, t
p
< 10µs, T
j
< 150
o
C)
BV
EBO
V
I
C
Collector Current 4 A
I
CM
Collector Peak Current (t
p
<5 ms) 8 A
IB Base Current 2 A
I
BM
Base Peak Current (t
p
<5 ms) 4 A
P
tot
Total Dissipation at Tc = 25
o
C70W
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
1/5