BUL1203E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
APPLICATIONS
a73 ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
FE
range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
®
INTERNAL SCHEMATIC DIAGRAM
December 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-BaseVoltage (I
E
= 0) 1200 V
VCES Collector-Emitter Voltage (VBE = 0) 1200 V
VCEO Collector-Emitter Voltage (IB = 0) 550 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9 V
I
C
Collector Current 5 A
I
CM
Collector Peak Current (t
p
< 5 ms) 8 A
I
B
Base Current 2 A
I
BM
Base Peak Current (t
p
< 5 ms) 4 A
P
tot
Total Dissipation at T
c
= 25
o
C 100 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
1/7