SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 a37
PARTMARKING DETAILS BSS66 - M6
BSS67 - M7
BSS66R - M8
BSS67R - M9
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6V
Peak Pulse Current I
CM
200 mA
Continuous Collector Current I
C
100 mA
Base Current I
B
50 mA
Power Dissipation at T
amb
=25 C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage VG28G42G52G29G43G45G4f 40 V IG43=1mA
Collector-Base Breakdown Voltage VG28G42G52G29G43G42G4f 60 V I
G43=10µA
Emitter-Base Breakdown Voltage VG28G42G52G29G45G42G4f 6VI
G45=10µA
Collector- Emitter Cut-off Current IG43G45G53 50 nA VG43G45G53=30V
Collector-Emitter
Saturation Voltage
VG43G45G28G73G61G74G29 0.20
0.30
V
V
IG43=10mA, IG42=1mA
IG43=50mA, IG42=5mA*
Base-Emitter Saturation Voltage VG42G45G28G73G61G74G29 0.65 0.85
0.95
V
V
I
C
=10mA, IG42=1mA
IG43=50mA, IG42=5mA*
Static Forward Current BSS66
Transfer Ratio
hG46G45 20
35
50
30
15
150
IG43=100µA,
IG43=1mA,
IG43=10mA, VG43G45=1V
IG43=50mA*,
IG43=100mA*,
Static Forward Current BSS67
Transfer Ratio
hG46G45 40
70
100
60
30
300
IG43=100µA,
IG43=1mA,
IG43=10mA, VG43G45=1V
IG43=50mA*,
IG43=100mA*,
Transition Frequency BSS66
BSS67
fG54 250
300
MHz
MHz
IG43=10mA, VG43G45=20V
f=100MHz
Collector-Base Capacitance CG6fG62G6f 4pF VG43G42=5V, f=100kHz
Emitter-Base Capacitance CG69G62G6f 8pF VG45G42=0.5V, f=100kHz
Noise Figure N Typ. 6 dB I
G43=100µA, VG43G45=5V
RG53=1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
tG64; tG66
tG73
tG66
35
200
50
ns
ns
ns
VG43G43=3V, IG43=10mA
IG42G31= IG42G32 =1mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BSS66
BSS67
C
B
E
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