VN2010L/BS107
Vishay Siliconix
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 200-V (D-S) MOSFETs
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
(BR)DSS
Min (V) r
DS(on)
Max (C0087) V
GS(th)
(V) I
D
(A)
VN2010L 10 @ V
GS
= 4.5 V 0.8 to 1.8 0.19
BS107
200
28 @ V
GS
= 2.8 V 0.8 to 3 0.12
C0068 Low On-Resistance: 6 C0087
C0068 Secondary Breakdown Free: 220 V
C0068 Low Power/Voltage Driven
C0068 Low Input and Output Leakage
C0068 Excellent Thermal Stability
C0068 Low Offset Voltage
C0068 Full-Voltage Operation
C0068 Easily Driven Without Buffer
C0068 Low Error Voltage
C0068 No High-Temperature
“Run-Away”
C0068 High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
C0068 Telephone Mute Switches, Ringer Circuits
C0068 Power Supply, Converters
C0068 Motor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
VN2010L
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
BS107
Device Marking
Front View
“S” VN
2010L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” BS
107
xxyy
“S” = Siliconix Logo
xxyy = Date Code
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083C0032C0040C0084
C0065
C0032C0061C0032C0050C0053C0095C0067C0032C0085C0078C0076C0069C0083C0083C0032C0079C0084C0072C0069C0082C0087C0073C0083C0069C0032C0078C0079C0084C0069C0068C0041
Parameter Symbol VN2010L BS107 Unit
Drain-Source Voltage V
DS
200 200
Gate-Source Voltage V
GS
C003430 C003425
V
C0095
T
A
= 25C0095C 0.19 0.12
Continuous Drain Current (T
J
= 150 C)
T
A
= 100C0095C
I
D
0.12
A
Pulsed Drain Current
a
I
DM
0.8
T
A
= 25C0095C 0.8 0.5
Power Dissipation
T
A
= 100C0095C
P
D
0.32
W
Thermal Resistance, Junction-to-Ambient R
thJA
156 250 C0095C/W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C0095C
Notes
a. Pulse width limited by maximum junction temperature.