©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
BF256A/
B
F
2
5
6
B/BF256C
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage -30 V
I
GF
Forward Gate Current 10 mA
P
D
Total Device Dissipation @T
A
=25°C
Derate above 25°C
350
2.8
mW
mW/°C
T
STG
Operating and storage Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage V
DS
= 0, I
G
= 1µA-30V
V
GS
Gate-Source V
DS
= 15V, I
D
= 200µA -0.5 -7.5 V
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= 15V, I
D
= 10nA -0.5 -8 V
I
GSS
Gate Reverse Current V
GS
= -20V, V
GS
= 0 -5 nA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
BF256A
BF256B
BF256C
V
GS
= 15V, V
GS
= 0 3
6
11

7
13
18
mA
Small Signal Characteristics
gfs Common Source Forward Transconductance V
DS
= 15V, V
GS
= 0, f = 1KHz 4.5 mmhos
BF256A/BF256B/BF256C
N-Channel RF Amplifiers
This device is designed for VHF/UHF amplifiers.
Sourced from process 50.
TO-92
1. Gate 2. Source 3. Drain
1