COMSET SEMICONDUCTORS 1/3
BDY57 – BDY58
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDY57 80
V
CEO
Collector-Emitter Voltage
BDY58 125
V
BDY57 120
V
CBO
Collector-Base Voltage
BDY58 160
V
V
EBO
Emitter-Base Voltage
BDY57
BDY58
10 V
I
C
Collector Current
BDY57
BDY58
25 A
I
B
Base Current
BDY57
BDY58
6 A
P
TOT
Power Dissipation @ T
C
= 25°
BDY57
BDY58
175 Watts
T
J
Junction Temperature
T
S
Storage Temperature
BDY57
BDY58
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
BDY57
BDY58
1°C/W
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA