Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN POWER TRANSISTORS BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL UNIT
Collector -Emitter Voltage VCES V
Collector -Emitter Voltage VCEO V
Emitter Base Voltage VEBO V
Collector Current IC A
Collector Peak Current ICM
Total Power Dissipation upto Ta=25º C Ptot W
Tc=25º C
Storage Temperature Range Tstg ºC
Max Operating Junction Temperature Tj ºC
THERMAL RESISTANCE
Thermal Resistance Junction - Case Rth (j-c) ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
.
DESCRIPTION SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut off Current ICES VCE=VCES, VBE=0 1.0 mA
Collector Emitter Sustaining Voltage VCEO (sus)* IB =0, IC=100mA 700 V
Emitter Base Voltage VEBO IE=10mA, IC =0 5.0 V
BU508F, AF
Emitter Cut-off Current IEBO VEB=5V, IC=0 300 mA
BU508DF
DC Current Gain hFE IC=4.5A, VCE=5V 2.25
Diode forward Voltage VF IF=4.0A 2.0 V
BU508DF
Collector Emitter Saturation Voltage VCE(sat) * IC=4.5A, IB=2.0A 1.0 V
BU508AF, DF
IC=4.5A, IB=2.0A 5.0 V
BU508F
Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A 1.5 V
SWITCHING TIME
Storage Time ts IC=4.5A,hFE=2.5,VCC=140V 7.0 µs
Fall Time tf LC=0.9mH, LB=3µH 0.5 µs
* Pulse test: Pulse Duration <300ms , Duty cycle < 1.5%.
8
15
34
60
- 65 to +150
150
2.08
VALUE
1500
700
5
IS/ISO 9002
Lic# QSC/L- 000019.2
B
C E
Continental Device India Limited Data Sheet Page 1 of 3