LAB
SEME
2N1618
NPN SILICON
TRANSISTOR
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Continuous Collector Current
P
D
Total Device Dissipation
Derate above 100°C
T
STG
, T
J
Storage and Operating Junction Temperature Range
100V
80V
8V
5A
85W
570 mW/°C
–65 to +175°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–61 Metal Package.
Pin 1 – Emitter Pin 2 – Base Case – Collector
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Bipolar Power Transistor
TO–61 Hermetic Package
High Current Switching
LF Large Signal Amplification
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5641
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
G31G30G2E
G31
G36
G28G30
G2E
G34
G30
G30
G29
G31G37G2E
G32
G37
G28G30
G2E
G36
G38
G30
G29
G31
G32G33
G31G39G2EG30G35
G28G30G2EG37 G35 G30 G29
G6DG69G6EG2E
G32G2E
G37G39G34
G28G30
G2E
G31
G31
G30
G29
G32G2EG32G38G36
G28G31G2FG34G94G29
G20G55G4EG46G20G32G41
G31G31G2E
G31
G37G36
G28G30
G2E
G34
G34
G30
G29
G37G2E
G36G32
G28G30
G2E
G33
G30
G30
G29
G38G2E
G38G39
G28G30
G2E
G33
G35
G30
G29
G31G35G2EG34G32
G28G30G2EG36 G30 G37 G29
G6DG61G78G2E