 Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
1 Publication Order Number:
BS170/D
BS170
Preferred Device
Small Signal MOSFET
500 mA, 60 V
N−Channel TO−92 (TO−226)
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 s)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current (Note) I
D
0.5 Adc
Total Device Dissipation @ T
A
= 25°C P
D
350 mW
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
BS170
Y = Year
WW = Work Week
YWW
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO−92 (TO−226)
CASE 29
STYLE 30
N−Channel
S
1
2
3
1
Drain
3
Source
2
Gate
500 mA, 60 V
R
DS(on)
= 5
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com