A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CER
I
C
= 5.0 mA R
BE
= 10Ω 45 V
BV
CBO
I
C
= 1.0 mA 45 V
BV
EBO
I
E
= 1.0 mA 3.5 V
I
CBO
V
CB
= 28 V 0.5 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA 20 120 ---
C
OB
V
CB
= 28 V f = 1.0 MHz 7.5 pF
P
G
η
C
V
CC
= 28 V P
OUT
= 4.5 W f = 3.0 GHz
4.5
30
5.0
35
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC3005
DESCRIPTION:
The MSC3005 is Designed for Class
"C" Amplifier Applications up to 3 GHz.
FEATURES:
• P
OUT
= 5.0 W Typ. at 3 GHz
• Common Base Configuration
• Omnigold™ Metellization System
MAXIMUM RATINGS
I
C
700 mA
V
CB
30 V
P
DISS
17 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
8.5
O
C/W
PACKAGE STYLE .250 2L FLG
ASI ORDER CODE: ASI30304
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm

.117 / 2.97
H .560 / 14.22 .570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I
J
K
H
F
B
E
C
ØD
A
N
M
P
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18
E
C
Base is connected to flange