STP5NB90
STP5NB90FP
N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP
PowerMESH MOSFET
PRELIMINARY DATA
n TYPICAL R
DS(on)
= 2.3 Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n UNINTERRUPTIBLE POWER SUPPLY(UPS)
n DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220 TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP5NB90 STP5NB90FP
V
DS
Drain-source Voltage (V
GS
=0) 900 V
V
DGR Drain- gate Voltage (RGS =20kΩ)
900 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at T
c
=25
o
C55(*)A
Drain Current (continuous) at T
c
=100
o
C3.13.1
DM
(•) Drain Current (pulsed) 20 20 A
P
tot
Total Dissipation at T
c
=25
o
C 125 40 W
Derating Factor 1.0 0.32 W/
o
C
dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC)  2000 V
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area ( 1)ISD ≤5 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj≤TJMAX
(*) Limited only by maximum temperature allowed
TYPE V
DSS
R
DS(on)
I
D
STP5NB90
STP5NB90FP
900 V
900 V
<2.5Ω
<2.5Ω
5A
5A
1/6