TECHNICAL DATA

P-CHANNEL J-FET
Qualified per MIL-PRF-19500/296
Devices Qualified Level
2N2609




JAN

ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)
Parameters / Test Conditions Symbol Value Units
Gate - Source Voltage V GSS 30 V
Power Dissipation (1) T A = +25 0 C P D 300 mW
Operating Junction & Storage Temperature Range T op , T stg - 65 to +200 0 C
(1) Derate linearly 1.71 mW/ 0 C for T A > +25 0 C.




TO - 18
(TO - 206AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units
Gate - Source Breakdown Voltage
V DS = 0, I G = 1.0 µAdc

V (BR)GSS

30

Vdc
Gate Reverse Current
V DS = 0, V GS = 30 Vdc
V DS = 0, V GS = 15 Vdc

I GSS

30
22.5

ηAdc
Drain Current
V GS = 0, V DS = 5.0 Vdc

I DDSS

- 2.0

- 10.0

mAdc
Gate - Source Cutoff Voltage
V DS = 5.0 V, I D = 1.0 µAdc

V GS(off)

0.75

6.0

Vdc
Magnitude of Small - Signal, Common - Source Short - Circuit Forward
Transfer Admittance
V GS = 0, V DS = 5.0 Vdc, f = 1.0 kHz


Y fs2 


2,000


6,250


µmho
Small - Signal, Common - Source Short - Circuit Input Capacitance
V GS = 0, V DS = 5.0 Vdc, f = 1.0 MHz

C iss

10

pF
Common - Source Spot Noise Figure
V GS = 0, V DS = 5.0 Vdc, f = 1.0 kHz
B W = 16%, R G = 1.0 megohms, e gen = 1.82 mVdc, R L = 220 Ω


NF


3.0


dB

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120101
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