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SILICON TRANSISTOR
2SD2383
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE SWITCHING
DATA SHEET
Document No. D16154EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2002
The mark shows major revised points.

DESCRIPTION
The 2SD2383 is an element realizing high voltage in small
dimension. This transistor is ideal for downsizing sets
requiring high voltage.

FEATURES
• High voltage
• Small dimension

ORDERING INFORMATION
PART NUMBER PACKAGE
2SD2383 SC-59
Marking: N1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO 400 V
Collector to Emitter Voltage VCEO 300 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC(DC) 20 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C


PACKAGE DRAWING (Unit: mm)

2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1 –0.05
0.95
0.95
2.9 ±0.2
0.4
+0.1 –0.05
0.3
1.1 to 1.4
Marking
0.16
+0.1 –0.06
0 to 0.1
1
2
3
1. Emitter
2. Base
3. Collector