(SEE REVERSE SIDE)
R3


BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X

PNP SILICON TRANSISTOR


JEDEC TO-18 CASE




DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

MAXIMUM RATINGS (T
A
=25°C unless otherwise noted)
SYMBOL BCY78 BCY79 UNITS
Collector-Base Voltage V
CBO
32 45 V

Collector-Emitter Voltage V
CEO
32 45 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
100 mA

Collector Current (Peak) I
CM
200 mA

Base Current (Peak) I
BM
200 mA

Power Dissipation P
D
340 mW
Power Dissipation(T
C
=25°C) P
D
1.0 W
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +200 °C
Thermal Resistance Θ
JA
450 °C/W
Thermal Resistance Θ
JC
150 °C/W

ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
V
CB
= Rated V
CBO
15 nA
I
CBO
V
CB
= Rated V
CBO
, T
A
=150°C 10 µA
I
EBO
V
EB
=5.0V 20 nA
BV
CBO
I
C
=10µA (BCY78) 32 V
BV
CBO
I
C
=10µA (BCY79) 45 V
BV
CEO
I
C
=2.0mA (BCY78) 32 V
BV
CEO
I
C
=2.0mA (BCY79) 45 V
BV
EBO
I
E
=1.0µA 5.0 V
V
CE(SAT)
I
C
=10mA, I
B
=250µA 0.25 V
V
CE(SAT)
I
C
=100mA, I
B
=2.5mA 0.80 V
V
BE(SAT)
I
C
=10mA, I
B
=250µA 0.60 0.85 V
V
BE(SAT)
I
C
=100mA, I
B
=2.5mA 0.70 1.20 V
V
BE(ON)
V
CE
=5.0V, I
C
=2.0mA 0.60 0.75 V

BCY78-VII BCY78-VIII BCY78-IX BCY78-X
BCY79-VII BCY79-VIII BCY79-IX BCY79-X
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX
h
FE
V
CE
=5.0V, I
C
=10µA 140 TYP 30 40 100
h
FE
V
CE
=5.0V, I
C
=2.0mA 120 220 180 310 250 460 380 630
h
FE
V
CE
=1.0V, I
C
=10mA 80 120 400 160 630 240 1000
h
FE
V
CE
=1.0V, I
C
=100mA 40 45 60 60