©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
April 2005
BA
T54
S
WT1G/BA
T
5
4
CWT1G
Sc
h
o
ttky
Diodes
BAT54SWT1G/BAT54CWT1G Rev. A
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Value Unit
V
RRM
Maximum Repetitive Reverse Voltage 30 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
600 mA
T
STG
Storage Temperature Range -65 to +125 °C
T
J
Operating Junction Temperature -65 to +125 °C
Symbol Parameter Value Unit
P
D
Power Dissipation 232 mW
R
θJA
Thermal Resistance, Junction to Ambient 430 °C/W
Symbol Parameter Conditions Min. Max. Units
V
R
Breakdown Voltage I
R
= 10µA30V
V
F
Forward Voltage I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
240
320
400
500
0.8
mV
mV
mV
mV
V
I
R
Reverse Leakage V
R
= 25V 2 µA
C
T
Total Capacitance V
R
= 1V, f = 1.0MHz 10 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
5.0 ns
12
3
BAT54SWT1G = YB
BAT54CWT1G = YC
MARKING
Connection Diagram
3
1 2
3
1 2
BAT54CWT1GBAT54SWT1G
SOT-323