©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A
BA
S
16HT1G
Small Signal Diode
Absolute Maximum Ratings * T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 85 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second 600 mA
T
STG
Storage Temperature Range -65 to +150 °C
T
J
Operating Junction Temperature -55 to +150 °C
Symbol Parameter Value Units
P
D
Power Dissipation 200 mW
R
θJA
Thermal Resistance, Junction to Ambient 600 °C/W
Symbol Parameter Test Conditions Min. Max. Units
V
R
Breakdown Voltage I
R
= 5.0µA85V
V
F
Forward Voltage I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
715
855
1.0
1.25
mV
mV
V
V
I
R
Reverse Leakage V
R
= 75V
V
R
= 25V, T
A
= 150°C
V
R
= 75V, T
A
= 150°C
1.0
30
50
µA
µA
µA
C
T
Total Capacitance V
R
= 0, f = 1.0MHz 2.0 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
6.0 ns
BAS16HT1G
Connection Diagram
2
1
1
2
A1
SOD-323