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Skyworks Proprietary and Confidential Information Products and Product Information are Subject to Change Without Notice. April 14, 2004 1
AS192-306: PHEMT GaAs IC High Power
SP4T Switch 0.1–2.5 GHz
DATA SHEET
Features
●
4 symmetric RF paths
●
Positive voltage control
●
High IP3
●
Excellent harmonic performance
●
Handles GSM power levels
●
Available in QFN-16 (4 x 4 mm) package
QFN-16 (4 x 4 mm)
Exposed Pad
0.008 (0.20 mm)
Seating Plane
0.0008
(0.02 mm)
+0.001
(0.03 mm)
-0.0008
(0.02 mm)
0.035 (0.90 mm)
± 0.004 (0.10 mm)
0.157
(4.00 mm)
0.157
(4.00 mm)
Pin 1
Indicator
0.077
(1.950 mm)
0.077 (1.950 mm)
0.042
(1.075 mm)
0.085 (2.15 mm)
+ 0.004 (0.10 mm)
- 0.006 (0.15 mm)
0.085 (2.15 mm)
+ 0.004 (0.10 mm)
- 0.006 (0.15 mm)
Description
The AS192-306 is a reflective SP4T switch. It is an ideal switch
for higher power applications. It can be used for GSM dual-band
handset applications where low loss, low current and small size
are critical parameters.
Parameter Frequency Min. Typ. Max. Unit
Insertion loss Ant-J1,J2,J3,J4 0.1–0.5 GHz 0.90 1.1 dB
0.5–1.0 GHz 0.95 1.1 dB
1.0–2.0 GHz 1.00 1.2 dB
2.0–2.5 GHz 1.10 1.3 dB
Isolation Ant-J1,J2,J3,J4 0.1–0.5 GHz 30 34 dB
0.5–1.0 GHz 25 29 dB
1.0–2.0 GHz 19 23 dB
2.0–2.5 GHz 18 21 dB
VSWR 0.1–1.0 GHz 1.3:1
1.0–2.5 GHz 1.4:1
Electrical Specifications at 25 °C (0, +4.5 V)
Parameter Condition Frequency Min. Typ. Max. Unit
Switching characteristics Rise, fall (10/90% or 90/10% RF) 50 ns
On, off (50% CTL to 90/10% RF) 100 ns
Video feedthru 50 mV
IP3 13 dBm/tone +55 dBm
2nd and 3rd harmonics 34 dBm input 900 MHz +65 dBc
Control voltages VLOW = 0
VHIGH = +4.5 V @ 200 µA max. for RF power > 30 dBm
VHIGH = +3.0 V @ 200 µA max. for RF power 20–30 dBm
VHIGH = +2.7 V @ 200 µA max. for RF power < 20 dBm
Operating Characteristics at 25 °C (0, +4.5 V)