Transistors
Publication date : December 2004 SJC00324AED 1
2SC6036
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2162
 Features
 Low collector-emitter saturation voltage V
CE(sat)
 SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
12 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
500 mA
Peak collector current I
CP
1 A
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
–55 to +125 °C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 15 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 12 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Forward current transfer ratio h
FE
V
CE
= 2 V, I
C
= 10 mA 270 680 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 200 mA, I
B
= 10 mA 250 mV
Transition frequency f
T
V
CB
= 2 V, I
E
= –10 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, f = 1 MHz 4.5 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collecter SSSMini3-F1 Package
1.20
±
0.05
0.5
2
±
0.03
0 to 0.01
0.15 max.
5°
0.15 min
.
0.80
±
0.05
0.15 min.
0.33
(0.40)(0.40)
1 2
3
5°
0.80±0.05
1.20±0.05
+0.05
−0.02
0.10
+0.05
−0.02
0.23
+0.05
−0.02
Marking Symbol : 4U