BAR63V-02V-GS08
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器件资料摘要:
BAR63V-02V
Document Number 85642
Rev. 1.5, 29-Jun-05
Vishay Semiconductors
www.vishay.com
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RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
• Low forward resistance
Space saving SOD-523 package with
low series inductance
Very small reverse capacitance
Lead (Pb)-free component
Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
BAR63V-02V BAR63V-02V-GS18 or BAR63V-02V-GS08 C Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
50 V
Forward current I
F
100 mA
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
Parameter Test condition Symbol Value Unit
Junction soldering point R
thJS
100 K/W
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