APT200GN60J
器件描述：Intergrated Gate Resistor: Low EMI, High Reliability
器件厂商：ADPOW [Advanced Power Technology]
文件大小：199.53KB，共6页
Sponsor by e络盟器件资料摘要：
050-7610 Rev A 1-2005
APT200GN60JTYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 3.2mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 125°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
UNIT
Volts
mA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
APT200GN60J
600
±20
250
110
600
600A @600V
568
-55 to 150
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
APT200GN60J
600V
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs
have ultra low V
CE(ON)
and are ideal for low frequency applications that require
absolute minimum conduction loss. Easy paralleling is a result of very tight
parameter distribution and a slightly positive V
CE(ON)
temperature coefficient.
A built-in gate resistor ensures extremely reliable operation, even in the event
of a short circuit fault. Low gate charge simplifies gate drive design and
minimizes losses.
• 600V Field Stop
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
S
O
T
-2
2
7
G
E
E
C
ISOTOP
®
"UL Recognized"
G
C
E
MIN TYP MAX
600
5 5.8 6.5
1.05 1.45 1.85
1.65
1.15
1.19
4
TBD
600
2
APT200GN60JTYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 3.2mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 125°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
UNIT
Volts
mA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
APT200GN60J
600
±20
250
110
600
600A @600V
568
-55 to 150
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
APT200GN60J
600V
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs
have ultra low V
CE(ON)
and are ideal for low frequency applications that require
absolute minimum conduction loss. Easy paralleling is a result of very tight
parameter distribution and a slightly positive V
CE(ON)
temperature coefficient.
A built-in gate resistor ensures extremely reliable operation, even in the event
of a short circuit fault. Low gate charge simplifies gate drive design and
minimizes losses.
• 600V Field Stop
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
S
O
T
-2
2
7
G
E
E
C
ISOTOP
®
"UL Recognized"
G
C
E
MIN TYP MAX
600
5 5.8 6.5
1.05 1.45 1.85
1.65
1.15
1.19
4
TBD
600
2