MSC1308.PDF 10-25-99
BFR91
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 12 Vdc
V CBO Collector-Base Voltage 15 Vdc
V EBO Emitter-Base Voltage 3.0 Vdc
I C Collector Current 35 mA
Thermal Data
P D Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
180
2.0
mWatts
mW/ º C
Tstg Storage Temperature
-65 to +150 ºC
R θJA Total Device Dissipation @ TA = 60ºC
Derate above 60ºC 500 ºC/W
Macro T
(STYLE #2)
Features
• High Current-Gain – Bandwidth Product, fT = 5 GHz ( typ) @ IC = 30 mA
• Low Noise Figure – NF = 1.9 dB ( typ) @ f = 0.5 GHz, 2.5 dB ( typ) @ 1GHz
• High Power Gain – Gmax = 16 dB ( typ) @ f = 0.5 GHz, 10.9dB ( typ) @ 1GHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855