2SK2390
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
• Avalanche ratings
Outline
1
2
3

TO-220CFM
1. Gate
2. Drain
3. Source
D
G
S