Semiconductor Group 1 25/09/1997
Preliminary data BSP 223
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDS(on) Package Marking
BSP 223 600 V 0.38 A 5 Ω SOT-223 BSP 223
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C
ID
0.38
A
DC drain current, pulsed
TA = 25 °C
IDpuls
1.52
Avalanche energy, single pulse
ID = 1.4 A, VDD = 50 V, RGS = 25 Ω
L = 122 mH, Tj = 25 °C
EAS
130
mJ
Gate source voltage VGS ± 20 V
Power dissipation
TA = 25 °C
Ptot
1.8
W