1
Power F-MOS FETs
unit: mm
2SK1611
Silicon N-Channel Power F-MOS FET
n Features
l High avalanche energy capacity
l V
GSS
: 30V guaranteed
l Low R
DS(on)
, high-speed switching characteristic
n Applications
l High-speed switching (switching power supply, AC adaptor)
l For high-frequency power amplification
n Absolute Maximum Ratings (T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
±30
±3
±6
20
50
2
150
- 55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
n Electrical Characteristics (T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
EAS
*
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
L = 4.5mH, I
D
= 3A, V
DD
= 50V
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100W
min
800
20
1
1.5
typ
3.2
2.4
730
90
40
40
35
105
max
0.1
±1
5
4
Unit
mA
m A
V
mJ
V
W
S
pF
pF
pF
ns
ns
ns
*
Single pulse
*
Avalanche energy capacity test circuit
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
f 3.1±0.1
V
DS
I
D
L
Drain
Gate
Source
R
GS
C V
DD
PVS