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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2N6027RLRA

器件描述:Programmable Unijunction Transistor
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:148.85KB,共8页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 2
1 Publication Order Number:
2N6027/D
C0050C0078C0054C0048C0050C0055C0044 C0050C0078C0054C0048C0050C0056
Preferred Device
C0080C0114C0111C0103C0114C0097C0109C0109C0097C0098C0108C0101
C0085C0110C0105C0106C0117C0110C0099C0116C0105C0111C0110 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction
characteristics such as R
BB
, η, I
V
, and I
P
by merely selecting two
resistor values. Application includes thyristor–trigger, oscillator, pulse
and timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO–92 plastic package for high–volume requirements,
this package is readily adaptable for use in automatic insertion
equipment.
• Programmable — R
BB
, η, I
V
and I
P
• Low On–State Voltage — 1.5 Volts Maximum @ I
F
= 50 mA
• Low Gate to Anode Leakage Current — 10 nA Maximum
• High Peak Output Voltage — 11 Volts Typical
• Low Offset Voltage — 0.35 Volt Typical (R
G
= 10 k ohms)
• Device Marking: Logo, Device Type, e.g., 2N6027, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
*Power Dissipation
Derate Above 25°C
P
F
1/θ
JA
300
4.0
mW
mW/°C
*DC Forward Anode Current
Derate Above 25°C
I
T
150
2.67
mA
mA/°C
*DC Gate Current I
G
C003450 mA
Repetitive Peak Forward Current
100 µs Pulse Width, 1% Duty Cycle
*20 µs Pulse Width, 1% Duty Cycle
I
TRM
1.0
2.0
Amps
Non–Repetitive Peak Forward Current
10 µs Pulse Width
I
TSM
5.0 Amps
*Gate to Cathode Forward Voltage V
GKF
40 Volts
*Gate to Cathode Reverse Voltage V
GKR
C00425.0 Volts
*Gate to Anode Reverse Voltage V
GAR
40 Volts
*Anode to Cathode Voltage
(1)
V
AK
C003440 Volts
Operating Junction Temperature Range T
J
–50 to
+100
°C
*Storage Temperature Range T
stg
–55 to
+150
°C
*Indicates JEDEC Registered Data
(1) Anode positive, R
GA
= 1000 ohms
Anode negative, R
GA
= open
PUTs
40 VOLTS
300 mW
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
K
G
A
TO–92 (TO–226AA)
CASE 029
STYLE 16
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Cathode
Anode