A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 33 V
BV
CES
I
C
= 100 mA 65 V
BV
EBO
I
E
= 5.0 mA 4.0 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A 10 ---
C
CB
V
VB
= 28 V f = 1.0 MHz 200 pF
P
G
η
C
V
CC
= 28 V P
OUT
= 100 W f = 175 MHz
8.5
60
dB
%
NPN SILICON RF POWER TRANSISTOR
BM100-28
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE 3&4 = EMITTER
DESCRIPTION:
The ASI BM100-28 is Designed for high
power VHF Applications up to 200 MHz.
FEATURES:
• Common Emitter
• P
G
= 8.5 dB at 20 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
20 A
V
CEO
33 V
V
CES
65 V
V
EBO
4.0 V
P
DISS
270 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
0.65
O
C/W