AS7C164
器件描述:5V 8K X 8 CMOS SRAM
文件大小:224.97KB,共8页
Sponsor by e络盟
器件资料摘要:
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High speed
- 12/15/20 ns address access time
- 6/7/8 ns output enable access time
28-pin JEDEC standard package
-300 mil SOJ
AA A A A A
CE1
circuit
CE2
13
14
I/O4
I/O3
I/O2 16
15
50 6 7 8 9
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-12
Maximum address access time 12
Maximum output enable access time 6
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Maximum operating current 110
Maximum CMOS standby current 2.0
GND
-15 -20 Unit
15 20 ns
7 8 ns
Low power consumption: ACTIVE
- 550 mW (AS7C164) / max @ 12 ns
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128×64×8
Array
(65,536)
Input buffer
A1
A2
A3
A4
A10
A11
A12 I/O0
I/O7
V
CC
GND
OE
WE
Column decoder
R
o
w decoder
Control
Sense amp
ESD protection ≥ 2000 volts
Latch-up current ≥ 200 mA
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1
2
3
4
5
6
7
8
9
10
11
12
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
WE
CE2
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
28-pin PDIP, SOJ (300 mL)
AS7
C
16
4
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g138
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• AS7C164 (5V version)
Commercial temperature
Organization: 8,192 words × 8 bits
Center power and ground pins
Low power consumption: STANDBY
- 11 mW (AS7C164) / max CMOS I/O
2.0V data retention
Easy memory expansion with CE1, CE2, OE inputs
TTL-compatible, three-state I/O
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100 90 mA
2.0 2.0 mA