Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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© 2002
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
• High DC current amplifiers due to darlington connection
Large current capacitance and low VCE(sat)
TO-126 power transistor with high power dissipation
Complementary transistor with 2SC4342
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −8.0 V
Collector current (DC) IC(DC)
–
+3.0 A
Collector current (pulse) IC(pulse)*
–
+6.0 A
Base current (DC) IB(DC) −0.3 A
Total power dissipation PT (Ta = 25°C) 1.3 W
Total power dissipation PT (Tc = 25°C) 12 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
*PW ≤ 10 ms, duty cycle ≤ 50%